1 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 PM400DV1A060 feature a) adopting new 5th generation full-gate cstbt tm chip b) the over-temperature protection which detects the chip surface temperature of cstbt tm is adopted. c) error output signal is possible from all each protection upper and lower arm of ipm. d) compatible v-series package. ? monolithic gate drive & protection logic ? detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage. application general purpose inverter, servo drives and other motor controls package outlines dimensions in mm
2 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 internal functions block diagram maximum ratings (t j = 25c, unless otherwise noted) inverter part symbol parameter conditions ratings unit v ces collector-emitter voltage v d =15v, v cin =15v 600 v i c t c =25c 400 i crm collector current pulse 800 a p tot total power dissipation t c =25c 1262 w i e emitter current t c =25c 400 i erm (free wheeling diode forward current) pulse 800 a t j junction temperature -20 ~ +150 c *: tc measurement point is just under the chip. control part symbol parameter conditions ratings unit v d supply voltage applied between : v p1 -v pc , v n1 -v nc 20 v v cin input voltage applied between : c pi -v pc , c ni -v nc 20 v v fo fault output supply voltage applied between : f po -v pc , f no -v nc 20 v i fo fault output current sink current at f po , f no terminals 20 ma igbt fw di out sink sc gnd tja tjk amp vcc in fo out sink sc gnd tja tjk amp vcc in fo e2 c2e1 c1 v p1 v pc c pi f po nc igbt fw di v n1 v nc c ni f no nc
3 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 total system symbol parameter conditions ratings unit v cc(prot) supply voltage protected by sc v d =13.5v ~ 16.5v inverter part, t j =+125c start 400 v v cc(surge) supply voltage (surge) applied between : c1-e2, surge value 500 v t c module case operating temperature -20 ~ +100 c t stg storage temperature -40 ~ +125 c v isol isolation voltage 60hz, sinusoidal, charged part to base plate, ac 1min, rms 2500 v *: t c measurement point is just under the chip. thermal resistance limits symbol parameter conditions min. typ. max. unit r th(j-c)q junction to case, igbt (per 1 element) (note.1) - - 0.099 r th(j-c)d thermal resistance junction to case, fwdi (per 1 element) (note.1) - - 0.153 r th(c-s) contact thermal resistance case to heat sink, (per 1 module) thermal grease applied (note.1) - 0.018 - k/w note1: if you use this value, r th(s-a) should be measured just under the chips. electrical characteristics (tj = 25c, unless otherwise noted) inverter part limits symbol parameter conditions min. typ. max. unit t j =25c - 1.90 2.35 v cesat collector-emitter saturation voltage v d =15v, i c =400a v cin =0v, pulsed (fig. 1) t j =125c - 1.90 2.35 v v ec emitter-collector voltage i e =400a, v d =15v, v cin = 15v (fig. 2) - 1.7 2.8 v t on 0.3 0.8 2.0 t rr - 0.4 0.8 t c(on) - 0.4 1.0 t off - 1.0 2.3 t c(off) switching time v d =15v, v cin =0v 15v v cc =300v, i c =400a t j =125c inductive load (fig. 3,4) - 0.3 1.0 ? s t j =25c - - 1 i ces collector-emitter cut-off current v ce =v ces , v d =15v , v cin =15v (fig. 5) t j =125c - - 10 ma
4 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 control part limits symbol parameter conditions min. typ. max. unit v p1 -v pc - 2 4 i d circuit current v d =15v, v cin =15v v n1 -v nc - 2 4 ma v th(on) input on threshold voltage 1.2 1.5 1.8 v th(off) input off threshold voltage applied between : c pi -v pc , c ni -v nc 1.7 2.0 2.3 v sc short circuit trip level -20 t j 125c, v d =15v (fig. 3, 6) 600 - - a t off(sc) short circuit current delay time v d =15v (fig. 3, 6) - 0.2 - ? s ot trip level 135 - - ot (hys) over temperature protection detect temperature of igbt chip hysteresis - 20 - c uv t trip level 11.5 12.0 12.5 uv r supply circuit under-voltage protection -20 tj 125c reset level - 12.5 - v i fo(h) - - 0.01 i fo(l) fault output current v d =15v, v fo =15v (note.2) - 10 15 ma t fo fault output pulse width v d =15v (note.2) 1.0 1.8 - ms note.2: fault output is given only when the internal sc, ot & uv protections schemes of either upper or lower arm device operat e to protect it. mechanical ratings and characteristics limits symbol parameter conditions min. typ. max. unit m s mounting part screw : m6 3.92 4.90 5.88 m t mounting torque main terminal part screw : m6 3.92 4.90 5.88 n ? m m weight - - 510 - g recommended conditions for use symbol parameter conditions recommended value unit v cc supply voltage applied across c1-e2 terminals 400 v v d control supply voltage applied between : v p1 -v pc , v n1 -v nc (note.3) 15.0 1.5 v v cin(on) input on voltage 0.8 v cin(off) input off voltage applied between : c pi -v pc , c ni -v nc 4.0 v f pwm pwm input frequency using app lication circuit of fig. 8 20 khz t dead arm shoot-through blocking time for ipm?s each input signals (fig. 7) 3.0 ? s note.3: with ripple satisfying the following conditions: dv/dt swing 5v/ s, variation 2v peak to peak
5 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 precautions for testing 1. before applying any control supply voltage (v d ), the input terminals should be pulle d up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. after this, the specified on and off level setting for each input signal should be done. 2. when performing ?sc? tests, the turn-off surge voltage spike at the corresponding prot ection operation should not be allowed to rise above v ces rating of the device. (these test should not be done by using a curve tracer or its equivalent.) fig. 1 v cesat te s t fig. 2 v ec te s t fig. 3 switching time and sc test circuit fig. 4 switching time test waveform fig. 5 i ces te s t fig. 6 sc test waveform fig. 7 dead time measurement point example e1c2 c1 v d1 e2 ic vcc v d2 v p1 v pc c pi f po nc v n1 v nc c ni f no nc e1c2 c1 v d1 e2 ic vcc v d2 v p1 v pc c pi f po nc v n1 v nc c ni f no nc v *1 v *c c *i e1(e2) c1(c2) f *o v d nc a pulse v *1 v *c c *i e1(e2) c1(c2) ic f *o v v d nc v *1 v *c c *i e1(e2) c1(c2) -ic f *o v v d nc vce i e
6 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 fig. 8 application example circuit notes for stable and safe operation ; ? design the pcb pattern to minimize wiring length between opto- coupler and ipm?s input terminal , and also to minimize the stray capacity between the input and output wirings of opto-coupler. ? connect low impedance capacitor between the vcc and gnd terminal of each fast switching opto-coupler. ? fast switching opto-couplers: t plh , t phl 0.8 s, use high cmr type. ? slow switching opto-coupler: ctr > 100% ? use 6 isolated control power supplies (v d ). also, care should be taken to minimize the instantaneous voltage charge of the power supply. ? make inductance of dc bus line as small as possible, and mi nimize surge voltage using snubber capacitor between c1 and e2 terminal. vcc in gnd out ot v p1 f po v pc sc c1 e1c2 (u) vcc in gnd out ot sc e2 + - if vd1 20k fo c pi f no v n1 v nc c ni fo if vd2 20k vcc in gnd out ot v p1 f po v pc sc c1 e1c2 (v) vcc in out ot sc gnd e2 if vd3 20k fo c pi f no v n1 v nc c ni fo if vd4 20k vcc vcc in gnd out ot v p1 f po v pc sc c1 e1c2 (w) vcc in gnd out ot sc e2 if vd5 20k fo c pi f no v n1 v nc c ni fo if vd6 20k m 10 0.1 10 0.1 10 0.1 10 0.1 10 0.1 10 0.1
7 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 performance curves output characteristics (typical) collector-emitter saturation voltage (vs. ic) characteristics (typical) collector current i c (a) 0 50 100 150 200 250 300 350 400 0.5 1.0 1.5 2.0 2.5 collector-emitter saturation voltage v cesat (v) 0 0.5 1 1.5 2 2.5 0 100 200 300 400 tj=25c tj=125c collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage (vs. v d ) characteristics (typical) free wheeling diode forward characteristics (typical) collecto r-emitter saturation voltage v cesat (v) 1.0 1.5 2.0 2.5 12 13 14 15 16 17 18 emitter current i e (a) 0 50 100 150 200 250 300 350 400 00.511.52 control voltage v d (v) emitter-collector voltage v ec (v) tj=25c vd=15v vd=17v vd=15v vd=13v ic=400a tj=25c t j =125c vd=15v tj=25c t j =125c
8 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 switching time (t on , t off ) characteristics (typical) switching time (t c(on) , t c(off) ) characteristics (typical) switching time t on , t off ( s) 0.1 1.0 10.0 10 100 100 0 switching time t c(on) , t c(off) ( s) 0.01 0.1 1 10 100 1000 collector current i c (a) collector current i c (a) switching energy characteristics (typical) free wheeling diode reverse recovery characteristics (typical) switching energy e on , e off (mj/pulse) 0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 reverse recovery time t rr ( s) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 100 200 300 400 0 20 40 60 80 100 120 140 160 180 200 reverse recovery current i rr (a) collector current i c (a) emitter current i e (a) vcc=300v vd=15v tj=25c tj=125c inductive load toff ton vcc=300v vd=15v tj=25c tj=125c inductive load tc(off) tc(on) eoff eon vcc=300v vd=15v tj=25c tj=125c inductive load irr trr vcc=300v vd=15v tj=25c tj=125c inductive load
9 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 free wheeling diode reverse recovery energy characteristics (typical) i d vs. f c characteristics (typical) revese recovery energy e rr (mj/pulse) 0 2 4 6 8 10 12 0 100 200 300 400 i d (ma) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 emitter current i e (a) f c (khz) uv trip level vs. t j characteristics (typical) sc trip level vs. t j characteristics (typical) uv t / uv r (v) 0 2 4 6 8 10 12 14 16 18 20 -50 0 50 100 150 sc (sc of t j =25c is normalized 1) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 0 50 100 150 t j (c) t j (c) vcc=300v vd=15v tj=25c tj=125c in duc tiv e l oad vd=15v tj=25c t j =125c uvt uvr vd=15v
10 mitsubishi PM400DV1A060 flat-base type insulated package november. 2011 transient thermal impedance characteristics normalized transient thermal impedance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 time t (sec) single pulse igbt part; per unit base: rth(j-c)q=0.099k /w fwdi part; per unit base: rth(j-c)d=0.153k /w
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